- 您现在的位置：买卖IC网 > Sheet目录512 > SI6966DQ-T1-GE3 (Vishay Siliconix)MOSFET N-CH DUAL G-S 20V 8TSSOP
Si6966DQ
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
0.6
1.4
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 12 V
V DS = 20 V, V GS = 0 V
V DS = 20 V, V GS = 0 V, T J = 55 °C
V DS ≥ 5 V, V GS = 4.5 V
30
± 100
1
25
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 4.5 V, I D = 4.5 A
V GS = 2.5 V, I D = 3.9 A
V DS = 10 V, I D = 4.5 A
0.021
0.030
20
0.030
0.040
Ω
S
Diode Forward Voltage
a
V SD
I S = 1.25 A, V GS = 0 V
0.65
1.2
V
Dynamic b
Total Gate Charge
Q g
11.5
20
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q gs
Q gd
t d(on)
t r
V DS = 10 V, V GS = 4.5 V, I D = 4.5 A
V DD = 10 V, R L = 10 Ω
1.9
3.6
11
9
20
15
nC
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
t d(off)
t f
t rr
I D ? 1 A, V GEN = 10 V, R G = 6 Ω
I F = 1.25 A, dI/dt = 100 A/μs
36
11
30
55
20
60
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
24
18
12
V GS = 5 thru 3 V
2.5 V
2V
30
24
18
12
6
0
6
0
T C = 125 °C
25 °C
- 55 °C
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
www.vishay.com
2
V DS - Drain-to-Source Voltage (V)
Output Characteristics
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 71808
S-81221-Rev. C, 02-Jun-08
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SI6966EDQ-T1-GE3
MOSFET N-CH DUAL G-S 20V 8TSSOP
SI6967DQ-T1-GE3
MOSFET P-CH DUAL G-S 8V 8TSSOP
SI6969BDQ-T1-GE3
MOSFET P-CH DUAL G-S 12V 8TSSOP
SI6973DQ-T1-GE3
MOSFET P-CH DUAL G-S 20V 8TSSOP
SI6975DQ-T1-E3
MOSFET P-CH DUAL G-S 12V 8TSSOP
SI6993DQ-T1-GE3
MOSFET P-CH D-S 30V 8-TSSOP
SI7100DN-T1-GE3
MOSFET N-CH D-S 8V PPAK 1212-8
SI7107DN-T1-GE3
MOSFET P-CH 20V 9.8A 1212-8
相关代理商/技术参数
SI6966EDQ
制造商:Vishay Intertechnologies 功能描述:Dual N-channel MOSFET,SI6966EDQ 20V 4.5A
SI6966EDQ-T1
功能描述:MOSFET 20V 4.5A 1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI6966EDQ-T1-E3
功能描述:MOSFET 20V 4.5A 1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI6966EDQ-T1-GE3
功能描述:MOSFET 20V 5.2A 1.25W 30mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI6967DQ
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 1.8-V (G-S) MOSFET
SI6967DQ-T1
功能描述:MOSFET 8V 5A 1.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI6967DQ-T1-E3
功能描述:MOSFET 8V 5A 1.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI6967DQ-T1-GE3
功能描述:MOSFET 8.0V 5.0A 1.1W 30mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube